METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING SPIKE RAPID THERMAL PROCESSING FOR CRYSTALLIZING UNDOPED AMORPHOUS SILICON LAYER

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to improve surface roughness and to obtain uniform electrical properties from the entire surface area of the device by crystallizing an undoped amorphous silicon layer using SRTP(Spike Rapid Thermal Processing). CONSTITUTION: An amorphous silicon layer is formed on a semiconductor substrate(201) with a variety of elements. The amorphous silicon layer is transformed int a crystalline silicon layer(204) with uniform small-sized grains by using SRTP. The amorphous silicon layer is an undoped amorphous silicon layer.