METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO PREVENT WEAK DAGGLING BOND DUE TO LINER NITRIDE LAYER

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent the generation of a weak dangling bond due to a liner nitride layer by forming a thermal oxidation layer on an inner wall of a trench and performing a heat treatment on the thermal oxidation layer under a heavy hydrogen gas atmosphere before forming the liner nitride layer. CONSTITUTION: A pad oxide layer(32) and a nitride pattern(34) are sequentially formed on a semiconductor substrate(30). A trench(36) is formed in the resultant structure by performing etching on the pad oxide layer and the substrate using the nitride pattern as an etching mask. A thermal oxidation layer(38) is formed on an inner wall of the trench. A heat treatment is performed on the resultant structure under a heavy hydrogen gas atmosphere. A liner nitride layer is formed along the entire surface of the resultant structure.