METHOD OF MANUFACTURING HIGH DIELECTRIC CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE USING HIGH DENSITY PLASMA PROCESSING TO IMPROVE FATIGUE RESISTANCE CHARACTERISTICS AND REDUCE LEAKAGE CURRENT

摘要

PURPOSE: A method of manufacturing a high dielectric capacitor of a semiconductor memory device is provided to improve fatigue resistance characteristics and to reduce leakage current by removing carbon and nitride impurities from a high dielectric film using high density plasma processing. CONSTITUTION: An interlayer dielectric(38) and a lower electrode(44) are sequentially formed on a semiconductor substrate(30) with a predetermined lower structure. A high dielectric film(46) of (Bi, Ce)4Ti3O12 is formed on the entire surface of the resultant structure. Carbon and oxygen impurities are removed from the high dielectric film by performing high density plasma processing on the high dielectric film. An upper electrode(48) is formed on the high dielectric film.