METHOD FOR FORMING GATE ELECTRODE OF STACK STRUCTURE IN SEMICONDUCTOR DEVICE USING PHYSICAL VAPOR DEPOSITION

摘要

PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to improve reliability of a gate oxide layer by forming a stacked gate pattern of a metal film/a barrier layer/a polysilicon layer using PVD(Physical Vapor Deposition). CONSTITUTION: A gate oxide layer(21) and a conductive layer(22) are sequentially formed on a substrate(20). A barrier layer(23) is formed on the conductive layer. A metal film(24) is formed on the barrier layer by using PVD under fluorine-containing gas atmosphere. A hard mask(25) is formed on the metal film. A stacked gate electrode is then formed by patterning the stacked structure using the hard mask.