METHOD OF FORMING WELL REGION OF SEMICONDUCTOR DEVICE USING DEFECT GETTERING SITE FOR IMPROVING ELECTRICAL PROPERTIES

摘要

PURPOSE: A method of forming a well region of a semiconductor device is provided to improve electrical properties of the device by using a defect gettering site formed in a semiconductor substrate. CONSTITUTION: A defect gettering site(103) is formed in a semiconductor substrate(101). At this time, the defect gettering site is formed by performing an ion-implantation on the substrate using impurities with predetermined mass capable of preventing the TED(Transient Enhanced Diffusion) caused by a heat treatment. Indium is used as the impurity. A well(104) is sequentially formed in the substrate.