| 摘要 |
PURPOSE: A data sensing circuit for reducing leakage current is provided to reduce leakage current and to improve operating speed by having a switching part using a negative word line transistor that has higher threshold voltage than a transistor with low threshold voltage, and has lower threshold voltage than a transistor with normal threshold voltage. CONSTITUTION: A data sensing circuit for reducing leakage current comprises the first high nonassociated transistor(HN1) and the first low nonassociated transistor(LN1), wherein both are connected with the first bit line(BL); the second high nonassociated transistor(HN2) and the second low nonassociated transistor(LN2), wherein both are connected with the second bit line(BL/); a sense amplifier(10) of which the first node is connected with a joint(J1) between the first high nonassociated transistor and the first low nonassociated transistor, and of which the second node is connected with a joint(J2) between the second high nonassociated transistor and the second low nonassociated transistor; the first and the second transfer transistors(SN1,SN2) each connected with the first and the second node of the sense amplifier. Wherein the first and the second high nonassociated transistor, and the first and the second low nonassociated transistor are a negative word line transistor that has higher threshold voltage than a transistor with low threshold voltage, and has lower threshold voltage than a transistor with normal threshold voltage.
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