| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to remarkably reduce the resistance of a gate by forming the gate composed of a polycide structure and a tungsten layer, and to eliminate the necessity of a selective oxide process by forming the tungsten layer by a damascene process. CONSTITUTION: A gate oxide layer(22), a polycide structure of a polysilicon layer(23) and a tungsten silicide layer(24), and a hard mask are sequentially formed on a semiconductor substrate(20). A re-oxidation layer(26) is formed on the surface of the gate oxide layer and the sidewall of the polycide structure. A spacer(27) is formed on the polycide structure and the sidewall of the hard mask. A junction region(28) is formed in the semiconductor substrate. An interlayer dielectric(29) is formed on the substrate. The interlayer dielectric is etched to planarize the surface of the substrate and expose the surface of the hard mask. The exposed hard mask is selectively removed to form a groove exposing the upper surface of the polycide structure. A tungsten layer(31) is formed only on the polycide structure to fill a part of the groove so that a gate composed of the tungsten layer and the polycide structure is formed. An SAC(self align contact) barrier(32A) is formed only on the gate to completely fill the groove.
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