METHOD OF FORMING BIT LINE OF FLASH DEVICE USING METAL HARD MASK PATTERN FOR REDUCING CROSSTALK

摘要

PURPOSE: A method of forming a bit line of a flash device is provided to reduce crosstalk by keeping the distance between bit lines enough using a metal hard mask pattern. CONSTITUTION: A barrier layer(116), an interlayer dielectric(118) and a metal hard mask layer(120) are sequentially formed on a semiconductor substrate(110) with bit line contact plugs(112). A metal hard mask pattern for opening bit line regions corresponding to the bit line contact plugs is formed by selectively patterning the metal hard mask layer. Trenches for exposing the bit line contact plugs are formed in the resultant structure by etching the interlayer dielectric and the barrier layer using the metal hard mask pattern as an etching mask. A metal film for filling the trenches is formed thereon. Bit lines(130) are completed by planarizing the metal film.