| 摘要 |
PURPOSE: A method for forming a metallic interconnection in a semiconductor device is provided to increase the reliability of the semiconductor device by preventing short-circuit between metallic interconnections and increase of capacitance between metallic interconnections. CONSTITUTION: A first etching stopper layer(13), a lower insulating layer(15), a second etching stopper layer(17), a dielectric between interconnections(19), and a reflection stopper layer are vaporized on a semiconductor substrate(11). A trench is formed by selectively removing the reflection stopper layer, dielectric between interconnections, and the second etching stopper layer. A contact region is formed by selectively removing the lower insulating layer. A reinforcement oxide layer is vaporized. A blacking etching is performed until the first etching stopper layer is removed. A barrier layer(31) and a metallic layer(29) are deposited. A CMP(Chemical Mechanical Polishing) is performed until an upper portion of the dielectric between interconnections is exposed.
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