METHOD OF FORMING LANDING PLUG STRUCTURE WITHOUT BRIDGE BETWEEN GATE ELECTRODE AND BIT LINE OR STORAGE NODE ELECTRODE

摘要

PURPOSE: A method of forming a landing plug structure is provided to prevent the bridge between a damaged gate electrode and a bit line or a storage node electrode by forming a first landing plug in a bit line contact region and forming sequentially a second landing plug in a storage node contact region without CMP(Chemical Mechanical Polishing). CONSTITUTION: A semiconductor substrate(20) with a plurality of gate electrodes(23) is provided. A first insulating layer(25) with a first contact hole(26) for exposing a bit line contact region to the outside is formed thereon. A first landing plug(27a) is filled in the first contact hole. An ONON(Oxide Nitride Oxide Nitride) structure layer composed of a second to fifth insulating layer is formed thereon. A photoresist pattern is formed on the fifth insulating layer. A first pattern for exposing the third insulating layer to the outside is formed by etching selectively the fifth and fourth insulating layers using the photoresist pattern as an etching mask. A conductive spacer(33) is formed at both sidewalls of the first pattern. A second contact hole(34) is formed by etching the third to first insulating layers using the conductive spacer as an etching mask. A second landing plug(35a) is filled in the second contact hole.