METHOD OF FORMING CAPACITOR OF SEMICONDUCTOR DEVICE WITHOUT DEFECTS CAUSED BY FALL-DOWN OF LOWER ELECTRODE WITHIN SCRIBE LANE REGION

摘要

PURPOSE: A method of forming a capacitor of a semiconductor device is provided to prevent a second lower electrode of a scribe lane region from falling down due to etching for forming a first lower electrode of a cell pattern region by removing previously the second lower electrode therefrom. CONSTITUTION: An oxide pattern(2) is formed on a wafer(1). A lower electrode material(4) is deposited on the entire surface of the resultant structure and photoresist(3b) is coated thereon. An exposing and developing process are performed on a cell pattern region and a scribe line region with different dose according to each region. At this time, the photoresist of the scribe lane region is completely removed therefrom. The lower electrode material of the scribe lane region is then removed by using wet-etching.