发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING MIXED SOLUTION OF HF AND DIW AS CLEANING SOLUTION
摘要 PURPOSE: A method of manufacturing a semiconductor device is provided to minimize the damage of silicon by performing an enhanced cleaning process using a mixed solution of HF and DIW(DeIonized Water) as a cleaning solution. CONSTITUTION: A CMP(Chemical Mechanical Polishing) process for exposing silicon to the outside is performed on a semiconductor substrate. The semiconductor substrate is cleaned by using a mixed solution of HF and DIW, so that the exposed silicon is protected from damage.
申请公布号 KR20050002402(A) 申请公布日期 2005.01.07
申请号 KR20030043780 申请日期 2003.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, HYUNG SOON
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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