摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to minimize the damage of silicon by performing an enhanced cleaning process using a mixed solution of HF and DIW(DeIonized Water) as a cleaning solution. CONSTITUTION: A CMP(Chemical Mechanical Polishing) process for exposing silicon to the outside is performed on a semiconductor substrate. The semiconductor substrate is cleaned by using a mixed solution of HF and DIW, so that the exposed silicon is protected from damage.
|