SEMICONDUCTOR DEVICE FABRICATING METHOD CAPABLE OF SYMMETRICALLY FORMING SPACER OF BITLINE TO FORM INSULATION LAYER OF UNIFORM THICKNESS BETWEEN BITLINE AND PLUG

摘要

PURPOSE: A semiconductor device fabricating method capable of symmetrically forming a spacer of a bitline is provided to form an insulation layer of a uniform thickness between a bitline and a plug by forming a spacer of a uniform width on each sidewall of the bitline. CONSTITUTION: A semiconductor substrate(20) having a bitline(21) and a hard mask is prepared. A passivation layer(23) is formed on the semiconductor substrate. The passivation layer and the hard mask are etched and planarized to form a hard mask with a vertical structure. The passivation layer is eliminated. An insulation layer for a spacer is deposited on the resultant structure. The insulation layer is etched to form the spacer on the sidewall of the bitline.