发明名称 METHOD FOR CLEANING METAL LAYER TO PREVENT BRIDGE FROM BEING GENERATED BY GROWTH OF REACTION SOURCE IN SUBSEQUENT PROCESS FOR DEPOSITING INSULATION LAYER
摘要 PURPOSE: A method for cleaning a metal layer is provided to prevent a bridge from being generated by a growth of a reaction source in a subsequent process for depositing an insulation layer by performing a surface treatment on a metal layer while using ozone water and by eliminating ultra pure water and the reaction source. CONSTITUTION: A cleaning process is performed on a metal layer having undergone an etch process by using isopropylene alcohol. A rinse process is performed on the metal layer by using hot ozone water. The hot ozone water rinse process is either a QDR(quick dump rinse) or an overflow.
申请公布号 KR20050001910(A) 申请公布日期 2005.01.07
申请号 KR20030042912 申请日期 2003.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, WOO DUCK
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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