发明名称 |
METHOD FOR CLEANING METAL LAYER TO PREVENT BRIDGE FROM BEING GENERATED BY GROWTH OF REACTION SOURCE IN SUBSEQUENT PROCESS FOR DEPOSITING INSULATION LAYER |
摘要 |
PURPOSE: A method for cleaning a metal layer is provided to prevent a bridge from being generated by a growth of a reaction source in a subsequent process for depositing an insulation layer by performing a surface treatment on a metal layer while using ozone water and by eliminating ultra pure water and the reaction source. CONSTITUTION: A cleaning process is performed on a metal layer having undergone an etch process by using isopropylene alcohol. A rinse process is performed on the metal layer by using hot ozone water. The hot ozone water rinse process is either a QDR(quick dump rinse) or an overflow.
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申请公布号 |
KR20050001910(A) |
申请公布日期 |
2005.01.07 |
申请号 |
KR20030042912 |
申请日期 |
2003.06.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JUNG, WOO DUCK |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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