METHOD FOR FORMING TRENCH ISOLATION LAYER OF SEMICONDUCTOR DEVICE BY REMOVING PAD NITRIDE LAYER BEFORE COATING PHOTORESIST

摘要

PURPOSE: A method for forming a trench isolation layer of a semiconductor device is provided to reduce warpage of a silicon wafer due to a pad nitride layer by removing the pad nitride layer formed on a back surface before coating a photoresist. CONSTITUTION: A pad nitride layer(22(a), 22(b)) is formed on front surface and a back surface of silicon wafer(21). A trench(23) is formed by etching a silicon wafer by using the selectively etched pad nitride layer as a mask pattern. A first HDP(High Density Plasma) oxide layer(24) is formed on a front surface of silicon wafer. A pad nitride layer formed on a back surface of silicon wafer is removed.