发明名称 |
HETEROJUNCTION STRUCTURE OF P-TYPE SEMICONDUCTOR THIN FILM AND ZnO BASED NANO-BAR, MANUFACTURING METHOD THEREOF AND DEVICE USING THE SAME FOR EMBODYING EASILY CORRESPONDING DEVICE WITH HETEROJUNCTION STRUCTURE AT ROOM TEMPERATURE AND HIGH TEMPERATURE WITHOUT DEGRADATION OF EFFICIENCY |
摘要 |
PURPOSE: A heterojunction structure of a P-type semiconductor thin film and a ZnO based nano-bar, a manufacturing method thereof and a device using the same are provided to embody easily a corresponding device with heterojunction structure at a room temperature and at a high temperature without the degradation of efficiency by using high exciton binding energy of ZnO. CONSTITUTION: A plurality of N-type ZnO based nano-bars are vertically grown on a P-type semiconductor thin film. The ZnO of each nano-bar has high exciton binding energy, so that a heterojunction structure is easily realized. A band gap of P-type semiconductor is in a range of 1.5 to 4.5 eV.
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申请公布号 |
KR20050001582(A) |
申请公布日期 |
2005.01.07 |
申请号 |
KR20030041813 |
申请日期 |
2003.06.26 |
申请人 |
POSTECH FOUNDATION |
发明人 |
PARK, WON IL;YI, GYU CHUL |
分类号 |
C30B29/16;C30B29/60;H01L21/365;H01L29/06;H01L29/20;H01L29/267;H01L33/08;H01L33/26;H01L33/28;(IPC1-7):H01L33/00 |
主分类号 |
C30B29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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