METHOD OF FORMING VIA HOLE OF SEMICONDUCTOR DEVICE USING THREE-DIMENSIONAL FIB FOR IMPROVING METAL GAP-FILLING PROPERTIES

摘要

PURPOSE: A method of forming a via hole of a semiconductor device is provided to improve metal gap-filling properties by increasing the upper diameter of the via hole using a three-dimensional FIB(Focused Ion Beam). CONSTITUTION: An interlayer dielectric(29) is formed on a semiconductor substrate(21) with a lower metal line(27) composed of an aluminium film(23) and a TiN layer(25). A vertical via hole(33) is formed in the interlayer dielectric. The resultant structure is loaded on a rotatable stage(35). The upper diameter of the via hole is increased by performing etching using a three-dimensional FIB. At this time, the stage is tilted and rotated by a rotary shaft(37).