METHOD OF FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE USING SPACER TYPE NITRIDE LAYER FOR PREVENTING PROCESS DEFECTS

摘要

PURPOSE: A method of forming an isolation layer of a semiconductor device is provided to prevent process defects by obtaining a spacer type nitride layer from a liner nitride layer using dry-etching. CONSTITUTION: A trench(27) is formed in a semiconductor substrate(21). A sidewall oxide layer(29) is formed along an inner surface of the trench. A liner nitride layer is formed on the entire surface of the resultant structure. A spacer type nitride layer(31a) is formed at sidewalls of the trench by performing selectively dry-etching on the liner nitride layer.