METHOD OF FORMING METAL LINE OF SEMICONDUCTOR DEVICE WITHOUT DEGRADATION OF OPERATION SPEED

摘要

PURPOSE: A method of forming a metal line of a semiconductor device is provided to prevent the degradation of operation speed in the device due to the capacitance between metal lines by increasing a space between the metal lines. CONSTITUTION: A trench oxide(31) with first trenches is formed on a semiconductor substrate. A second sacrificial resist pattern is filled in each first trench. Second trenches(41) are formed in the trench oxide by performing etching using the second sacrificial resist pattern as an etching mask. A metal line(43a) is filled in each second trench.