| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to perform easily a gap-fill process on a predetermined structure with fine patterns without voids by using a low pressure HDP-CVD(High Density Plasma-Chemical Vapor Deposition). CONSTITUTION: A plurality of trenches(16) are formed by etching selectively a pad oxide layer(12) and a semiconductor substrate(10) using a pad nitride pattern(14) as an etching mask. A first oxide layer(18) for filling the trenches is formed on the entire surface of the resultant structure by using a low pressure HDP-CVD under predetermined conditions. A second oxide layer with voids is formed on the first oxide layer. The pad nitride pattern is exposed to the outside by performing a planarization process on the resultant structure. At this time, the voids of the second oxide layer are completely removed therefrom.
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