| 摘要 |
PURPOSE: A method of manufacturing a high dielectric capacitor of a semiconductor memory device is provided to increase surface area of a lower electrode by diffusing impurities from the lower electrode to the outside using a heat treatment. CONSTITUTION: An interlayer dielectric(38) and a barrier metal pattern(42) are sequentially formed on a semiconductor substrate(30) with a predetermined lower structure. A conductive layer is formed on the barrier metal pattern. At this time, the metal bulk of the conductive layer is impregnated with oxygen and carbon by adding CO to a sputtering gas. A lower electrode(44) is formed by patterning selectively the conductive layer. Impurities of the metal bulk are out-diffused by using a heat treatment, so that a surface of the lower electrode becomes rough. A dielectric film(46) is formed on the surface of the lower electrode.
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