METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR PREVENTING DEGRADATION AND DAMAGE OF TUNNEL OXIDE LAYER

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent the degradation of a tunnel oxide layer due to a heat treatment and to restrain the damage of the tunnel oxide layer. CONSTITUTION: A plurality of trenches are formed in a semiconductor substrate(301). A heat treatment for forming roundly a lower and upper corner of each trench is performed thereon. An isolation layer(306) is filled in the trench. A tunnel oxide layer(308) is formed within a cell region. A polysilicon layer(309) is formed on the entire surface of the resultant structure.