| 摘要 |
PURPOSE: A method for reading flash memory cell, NAND and NOR type flash memory device is provided to reduce reading time and to prevent the electric discharge owing to the leakage current by applying three different voltage levels. CONSTITUTION: A method for reading flash memory cell having a gate, a drain and a source, comprises the steps of: applying a channel voltage which is higher than the threshold voltage in a programmed state of the cell and lower than the threshold voltage of an erased state of the cell, to the gate; applying a read voltage(Vread) which is lower than the source voltage(Vcc) and higher than the ground voltage, to the drain; applying the source voltage(Vcc) to the source; reading the cell data by comparing the drain voltage with the reference voltage. In case the read voltage is lower than or equal to the reference voltage, the state of the cell is read as the programmed state, and in case the read voltage is higher than the reference voltage, the state of the cell is read as the erase state.
|
