METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR PREVENTING TRANSIENT ENHANCED DIFFUSION AND IMPROVING ACTIVATION RATIO OF IONS

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent TED(Transient Enhanced Diffusion) due to a heat treatment and to improve the activation ratio of ions in a source/drain region by performing an annealing process after forming a first and second well region. CONSTITUTION: A first well region(14) is formed in a semiconductor substrate(10) by performing a first ion-implantation using first ions with small mass. A second well region(16) is formed within the first well region by performing a second ion-implantation using second ions with large mass. A desired well region is completed by annealing the resultant structure.