发明名称 ANALYSIS METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an analysis method for a semiconductor device capable of performing excellent analysis when analyzing a laminated film such as a semiconductor layer or an insulator film constituting a semiconductor device even if two or more films of the laminated film have the same element as the constituent component. SOLUTION: This analysis method has processes of: preparing the semiconductor device having the laminated film 10; forming a section holes in a second insulating film 12, a third insulating film 13 and a fifth insulating film 15 adjacent to a fourth insulating film 14 having a surface 60 to be observed among first to fifth insulating films 11, 12, 13, 14 and 15 constituting the laminated film 10; forming first to fourth section metal films 81, 82, 83 and 84 by embedding a desired material made of known components in the section holes; and irradiating light or an electron beam on the surface 60 to be observed and analyzing the surface 60 to be observed with the scattered light or the electrons emitted from the surface 60 to be observed. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005003485(A) 申请公布日期 2005.01.06
申请号 JP20030166420 申请日期 2003.06.11
申请人 SANKEN ELECTRIC CO LTD 发明人 KOBAYASHI TATSUYA
分类号 G01N23/203;G01N21/65;H01L21/66;(IPC1-7):G01N21/65 主分类号 G01N23/203
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