发明名称 Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom
摘要 The invention comprises a composite material comprising a host material in which are incorporated semiconductor nanocrystals. The host material is light-transmissive and/or light-emissive and is electrical chargetransporting thus permitting electrical charge transport to the core of the nanocrystals. The semiconductor nanocrystals emit and/or absorb light in the near infrared spectral range. The nanocrystals cause the composite material to emit/absorb energy in the near infrared (NIR) spectral range, and/or to have a modified dielectric constant, compared to the host material. The invention further comprises electro-optical devices composed of this composite material and a method of producing them. Specifically described are light emitting diodes that emit light in the NIR and photodetectors that absorb light in the same region.
申请公布号 US2005002635(A1) 申请公布日期 2005.01.06
申请号 US20040837095 申请日期 2004.04.29
申请人 BANIN URI;TESSLER NIR 发明人 BANIN URI;TESSLER NIR
分类号 C09K11/06;C09K11/08;H01L33/18;H01L51/50;(IPC1-7):G02B6/00 主分类号 C09K11/06
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