| 摘要 |
PURPOSE: A GaN semiconductor light emitting device and a manufacturing method thereof are provided to reduce crystal defects and to acquire high brightness by using a buffer layer with an enhanced structure and an active layer with a quantum well structure. CONSTITUTION: A GaN semiconductor light emitting device includes a substrate(102), a GaN based buffer layer(104) on the substrate, a first In-doped GaN layer(106) on the buffer layer, an N type first electrode layer(108) on the first In-doped GaN layer, an active layer(116) for emitting light on the first electrode layer, a p-GaN layer(118) on the active layer and an InxGa1-xN/InyGa1-yN super lattice structure layer(120) on the p-GaN layer. The GaN based buffer layer is composed of one selected from a group consisting of an InGaN/GaN super lattice structure and a stacked structure of InxGa1-xN/GaN and AlxInyGa1-x,yN/InxGa1-xN/GaN. The active layer is composed of a single quantum well structure or a multi-quantum well structure.
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