发明名称 |
Sensing scheme for programmable resistance memory using voltage coefficient characteristics |
摘要 |
A method and apparatus for sensing the resistance state of data in a resistance memory cell by using the voltage coefficient of the cell instead of only its resistance. A voltage potential is applied across the resistance memory cell allowing the voltage coefficient of the cell to be determined and subsequently used to determine the logic state of the cell.
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申请公布号 |
US2005002218(A1) |
申请公布日期 |
2005.01.06 |
申请号 |
US20030610800 |
申请日期 |
2003.07.02 |
申请人 |
NAZARIAN HAGOP A. |
发明人 |
NAZARIAN HAGOP A. |
分类号 |
G11C11/00;G11C11/15;G11C11/16;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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