| 摘要 |
The invention relates to an integrated semiconductor component for high-frequency measurements and to the use thereof. It is provided that the semiconductor component is a component of a semiconductor circuit (10) comprising a first silicon layer (12), an adjoining silicon dioxide layer (insulating layer (14)) and a subsequent further silicon layer (structured layer (16)) (SOI wafer), and the semiconductor component comprises an IMPATT oscillator (30), having a resonator (24) which includes a metallized cylinder (18) of silicon, disposed in the structured layer (16); a coupling disk (28) covering the cylinder (18) in the region of the first layer (12); and an IMPATT diode (32), communicating with the cylinder (18) of the resonator (24) via a recess (38) in the coupling disk (28); and a reference oscillator (46) of lower frequency, having a resonator (24) which includes a metal cylinder (18) of silicon, disposed in the structured layer (16), and coupling disk (28) covering the cylinder in the region of the first layer (12); and a microwave conductor, communicating with the cylinder (18) of the resonator (24) via a recess (38) in the coupling disk (28), and the reference oscillator, via an active oscillator circuit (58), serves the purpose of frequency stabilization of the IMPATT oscillator (30); with integrated Schottky diodes; and a transmitting and receiving antenna (49).
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