| 摘要 |
Embodiments of the invention include a semiconductor substrate having an active region defined by a device isolation film, at least one trench formed in the active region, and a growth silicon layer formed along an internal face of the trench. The transistor also includes a first impurity region of first conductive type that is formed on a boundary region between the growth silicon layer and its opposite active region, and a gate insulation layer formed on upper parts of the growth silicon layer within the trench and the active region. Embodiments include a gate electrode having an upper part and a lower part, the gate electrode formed on the gate insulation layer, the upper part wider than the lower part, the upper part partially overlapping the growth silicon layer; and a second impurity region of second conductive type formed in the active region at both sides of the gate electrode.
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