发明名称 |
Test key and method for validating the position of a word line overlaying a trench capacitor in DRAMs |
摘要 |
A test key for validating the position of a word line structure overlaying a deep trench capacitor of a DRAM. The test key is deposited in the scribe line region of a wafer. The deep trench capacitor is deposited in the scribe line region and has a buried plate. A rectangular word line is deposited in the scribe line and covers a portion of the deep trench capacitor, and two passing word lines are deposited above the deep trench. A first doping region and a second doping region are deposited between the rectangular word line and the first passing word line and between the rectangular word line and the second passing word line respectively. A first plug, a second plug and a third plugs are coupled to the first doping region, the second doping region and the buried plate respectively.
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申请公布号 |
US2005002221(A1) |
申请公布日期 |
2005.01.06 |
申请号 |
US20040902450 |
申请日期 |
2004.07.29 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
WU TIE JIANG;HUANG CHIEN-CHANG;TING YU-WEI;JIANG BO CHING |
分类号 |
G11C8/14;H01L21/8242;H01L23/544;H01L27/02;(IPC1-7):G11C11/24 |
主分类号 |
G11C8/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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