发明名称 Surface acoustic wave device
摘要 There is disclosed a surface acoustic wave device having at least a diamond film, a piezoelectric-material film, and an electrode on a base material wherein all or some part of the diamond film consists of an electroconductive diamond in which a dopant is doped. Thereby, there can be provided a surface acoustic wave device wherein breakage of the substrate due to generation of static electricity can be prevented in a device manufacturing process so that the device manufacture yield can be increased, and electrification can be prevented at the time of real use so that high performance can be maintained for a long time, even if it is a surface acoustic wave device using diamond.
申请公布号 US2005001512(A1) 申请公布日期 2005.01.06
申请号 US20040836201 申请日期 2004.05.03
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 NOGUCHI HITOSHI;KUBOTA YOSHIHIRO
分类号 C23C16/27;H01L41/08;H01L41/09;H03H3/02;H03H9/02;H03H9/25;(IPC1-7):H03H9/25 主分类号 C23C16/27
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