| 摘要 |
PURPOSE: A method for forming metal interconnection of semiconductor device by damascene process to avoid a dishing phenomenon by preventing a polishing process by a metal layer of a large area until a polishing rate becomes remarkably low to perform a planarization process due to a difference of a deposition thickness when the inside of a cell or other fine metal pattern regions is being polished. CONSTITUTION: After an insulation oxide layer(33) is formed on a semiconductor wafer(31), an interconnection part is formed in the insulation oxide layer. The first copper barrier thin film(35) is formed on the insulation oxide layer including the interconnection part. A copper thin film is formed on the first copper barrier thin film. The second copper barrier thin film is formed on the copper thin film. The second copper barrier thin film and the copper thin film are polished by using copper polishing slurry. A polishing process is performed by using slurry for the copper barrier thin film to form a damascene metal interconnection(37a).
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