METHOD FOR ELIMINATING POLYMER IN ETCH CHAMBER IN FABRICATING SEMICONDUCTOR DEVICE TO PREVENT BRIDGE CAUSED BY POLYSILICON REMNANTS

摘要

PURPOSE: A method for eliminating polymer in an etch chamber in fabricating a semiconductor device is provided to prevent a bridge caused by polysilicon remnants by controlling a polymer generation source that exists in the etch chamber and hinders an etch process in etching a gate poly. CONSTITUTION: A semiconductor substrate having a pattern formation layer is installed in an etch chamber to form a desired pattern. F-radial gas and O-radical gas are injected to the inside of the etch chamber in a process prior to an etch process for etching the pattern formation layer so as to eliminate a native oxide layer and a polymer source in the etch chamber.