| 摘要 |
PURPOSE: A semiconductor device with reduced channel resistance is provided to improve performance of a semiconductor device by reducing the channel resistance of a wordline without increasing a short channel effect. CONSTITUTION: An active region(201) is disposed in an arbitrary x-axis virtual line direction. A wordline(200) forms a predetermined angle theta in the vertical direction of a major axis of the active region in a portion crossing the active region so as to increase the length of a segment crossing the active region, disposed in an arbitrary y-axis virtual line direction. Assuming that the width of the active region is W, the length of the segment of the wordline crossing the active region is W/sine theta.
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