| 摘要 |
PROBLEM TO BE SOLVED: To improve the dimensional controlling property of a resist pattern. SOLUTION: The developing solution composition for a resist essentially comprises an organic quaternary ammonium base and contains an anionic surfactant expressed by general formula (I) and has 0.01 to 1 mass% SO<SB>4</SB><SP>2-</SP>content. In formula (I), at least one of R<SB>1</SB>and R<SB>2</SB>represents a 5-18C alkyl group or an alkoxy group and the other is a hydrogen atom, a 5-18C alkyl group or an alkoxy group, at least one of R<SB>3</SB>, R<SB>4</SB>and R<SB>5</SB>represents an sulfonic acid ammonium group or a sulfonic acid substituted ammonium group, and the rest represents a hydrogen atom, a sulfonic acid ammonium group or a sulfonic acid substituted ammonium group. COPYRIGHT: (C)2005,JPO&NCIPI |
