METHOD AND APPARATUS FOR LASER ANNEALING

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for laser annealing by which the diameter of a crystal grain can be controlled by suppressing the formation of an amorphous Si ridge by deforming the energy distribution of a laser beam. SOLUTION: A symmetrical laser beam 2 having an energy distribution which is symmetrical with respect to the center line is converted into an asymmetrical laser beam 6 having an energy distribution which is asymmetrical with respect to the center line, and the crystal grain is grown on a substrate by melting a silicon film formed on the surface of the substrate by projecting the asymmetrical laser beam 6 upon the film. COPYRIGHT: (C)2005,JPO&NCIPI