| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a GaN based semiconductor optical device, in which when an optical end surface of an optical element having a GaN based semiconductor layer is formed, a cleavage plane can be formed at a high production yield, and a mass-production is excellent. SOLUTION: The method for manufacturing the GaN based semiconductor optical device contains an element forming step of epitaxial-growing a semiconductor layer 20 composed of a GaN based semiconductor on a sapphire substrate 10 to form a plurality of optical elements 30 distinctively; a scribing step of forming a scribing line 33 in the semiconductor layer 20; and a cleavage step of dividing the sapphire substrate 10 and the semiconductor layer 20 along a direction of the scribing line by applying an external force to form the cleavage plane on an optical end surface 30a of each optical element 30. In the scribing step, the scribing line 33 is formed in a region other than the optical end surface of the optical element 30, and also a scribing sectional shape along the direction of the scribing line is rounded off at the end. COPYRIGHT: (C)2005,JPO&NCIPI |
