| 摘要 |
PROBLEM TO BE SOLVED: To markedly improve transistor characteristic in a Fin-type-MOSFET. SOLUTION: The MOSFET comprises a first insulation film 3 which is formed on a semiconductor substrate 1b and contains at least a metal oxide containing a crystalline substance with a face interval different from the semiconductor substrate, a projecting-type channel area 5b which is formed on the first insulation film and has a face interval of crystal different from the semiconductor substrate, source-drain areas 10a and 10b formed on the first insulation film on both sides of the channel area, and a second insulation film 6a formed immediately over the channel area. In addition, the MOSFET is provided with a gate insulation film 7 formed on a side surface in a channel area different from the source-drain area, and a gate electrode 9a formed at least on the side surface in the channel area different from the source-drain area through the gate insulation film. COPYRIGHT: (C)2005,JPO&NCIPI |
