发明名称 DEVELOPER COMPOSITION FOR RESISTS AND METHOD FOR FORMATION OF RESIST PATTERN
摘要 <p>A developer composition for resists which has a high dissolution rate (high developing sensitivity). The developer composition for resists is a developer composition for resists, comprising an organic quaternary ammonium base as a main component and a surfactant, said surfactant containing an anionic surfactant represented by the following general formula (I), wherein at least one member of R1 and R2 represents an alkyl or alkoxy group having 5 to 18 carbon atoms and any reminder member represents a hydrogen atom, or an alkyl or alkoxy group having 5 to 18 carbon atoms, and at least one member of R3, R4 and R5 represents a group represented by the general formula (II), wherein M represents a metal atom, and any reminder member represents a hydrogen atom or a group represented by the general formula (II).</p>
申请公布号 WO2005001578(A2) 申请公布日期 2005.01.06
申请号 WO2004JP09077 申请日期 2004.06.22
申请人 TOKYO OHKA KOGYO CO., LTD.;WASHIO, YASUSHI;SAITO, KOJI 发明人 WASHIO, YASUSHI;SAITO, KOJI
分类号 G03F7/32;H01L21/027;(IPC1-7):G03F7/32 主分类号 G03F7/32
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