发明名称 |
DEVELOPER COMPOSITION FOR RESISTS AND METHOD FOR FORMATION OF RESIST PATTERN |
摘要 |
<p>A developer composition for resists which has a high dissolution rate (high developing sensitivity). The developer composition for resists is a developer composition for resists, comprising an organic quaternary ammonium base as a main component and a surfactant, said surfactant containing an anionic surfactant represented by the following general formula (I), wherein at least one member of R1 and R2 represents an alkyl or alkoxy group having 5 to 18 carbon atoms and any reminder member represents a hydrogen atom, or an alkyl or alkoxy group having 5 to 18 carbon atoms, and at least one member of R3, R4 and R5 represents a group represented by the general formula (II), wherein M represents a metal atom, and any reminder member represents a hydrogen atom or a group represented by the general formula (II).</p> |
申请公布号 |
WO2005001578(A2) |
申请公布日期 |
2005.01.06 |
申请号 |
WO2004JP09077 |
申请日期 |
2004.06.22 |
申请人 |
TOKYO OHKA KOGYO CO., LTD.;WASHIO, YASUSHI;SAITO, KOJI |
发明人 |
WASHIO, YASUSHI;SAITO, KOJI |
分类号 |
G03F7/32;H01L21/027;(IPC1-7):G03F7/32 |
主分类号 |
G03F7/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|