METHOD FOR FORMING ELECTRODE OF SEMICONDUCTOR DEVICE TO HAVE HIGH REACTION RESISTANCE, HIGH CONDUCTIVITY AND LOW EQUIVALENT OXIDE THICKNESS

摘要

PURPOSE: A method for forming an electrode of a semiconductor device is provided to have high reaction resistance, high conductivity and a low equivalent oxide thickness by introducing a new precursor for forming an electrode. CONSTITUTION: A high dielectric layer(120) is formed on a substrate(100). A tantalum amine derivative indicated by a chemical formula Ta(NR1)(NR2R3)3 wherein R1, R2 and R3 are the same or different as an H or C1-C6 alkyl group is introduced as a reaction material to form a barrier metal layer on the high dielectric layer. A gate metal layer is formed on the barrier metal layer. The gate metal layer and the barrier metal layer are patterned to form a barrier metal pattern(135) and a gate metal pattern(145).