PHOTOMASK FOR FABRICATING SEMICONDUCTOR DEVICE TO ELIMINATE CHEMICAL RESIDUE IN PELLICLE

摘要

PURPOSE: A photomask for fabricating a semiconductor device is provided to eliminate the chemical residue in a pellicle by injecting inert gas to the inside of the pellicle while the inert gas is exhausted by a predetermined flowrate. CONSTITUTION: A pellicle film(23) is formed on a mask glass(21) for pattern transcription. A pellicle frame(22) supports the pellicle film. A flow hole(27) is formed at one side of the pellicle frame so that inert gas is injected to the inside of the pellicle. A vent hole(26) is formed at the other side of the pellicle frame to exhaust the chemical residue by the inert gas.