| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent contact not open when forming SNC(Storage Node Contact) by using an APL(Advanced Planarization Layer). CONSTITUTION: A plurality of conductive patterns including a conductive layer(61), a hard mask(62) and a first sacrificial hard mask(63) are formed on a substrate(60). An APL(65) is deposited on the resultant structure and planarized to expose the conductive pattern. A second sacrificial hard mask(67) is formed on the resultant structure. A contact hole(69) is formed to expose the substrate by etching the APL using a photoresist pattern(68) as a mask. The remaining APL residues(70) on the bottom of the contact hole are removed by cleaning. A conductive layer is filled in the contact hole, thereby forming SNC plugs.
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