摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent attack of a conductive layer by forming a top conductive layer with a relatively narrow width compared to a hard mask using a spacer. CONSTITUTION: A conductive layer of multi-layer structure is formed on a substrate(40), wherein a top conductive layer(42) has a relatively narrow width(W2) compared to a bottom conductive layer(41). An insulating hard mask(43) with a desired width(W3) is formed on the conductive layer, wherein W3 is wider than W2. An insulating spacer(44) is filled between the gaps of W3 and W2. An insulating layer(45) is formed on the resultant structure. A plug(48) is contacted with the substrate through the insulating layer.
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