| 发明名称 |
SURFACE TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for improving wettability on the surface of a layer formed of an organic resin, as well as a method for manufacturing a semiconductor device in which an interlayer insulation layer is made of an organic resin and a laminated structure is formed. <P>SOLUTION: The surface treatment method is used to treat the surface of a film made of a first organic resin by using a solution showing acidity and basicity and apply a solution containing a second organic resin thereto. Thus, since the surface of the film made of an organic resin is treated by such a solution, a functional group with high polarity can be formed, and a solution that is mainly made of a solvent having the functional group with high polarity or of the organic resin with high polarity can be applied. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
| 申请公布号 |
JP2005005602(A) |
申请公布日期 |
2005.01.06 |
| 申请号 |
JP20030169690 |
申请日期 |
2003.06.13 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MURANAKA KOJI;NOMURA RYOJI;SHICHI TAKESHI;ARAO TATSUYA;KATAYAMA MASAHIRO |
| 分类号 |
G03F7/11;G03C1/52;H01L21/027;H01L21/312;H01L21/336;H01L21/768;H01L23/522;H01L27/32;H01L29/786;H01L51/00;H01L51/52;H01L51/56 |
主分类号 |
G03F7/11 |
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