| 摘要 |
PURPOSE: A semiconductor device is provided to fabricate a semiconductor device having a thermally stabilized good characteristic of a MOS(metal oxide semiconductor) transistor by guaranteeing a high relative dielectric constant. CONSTITUTION: A silicon substrate(1) is prepared. A silicon oxide layer is formed on a main surface of the silicon substrate. The first insulation layer(6a) is formed on the silicon oxide layer. The second insulation layer(7a) is formed on the first insulation layer. A gate electrode is formed on the second insulation layer. The first insulation layer is a high dielectric insulation layer, composed of a metal oxide layer, a metal silicate layer and a metal aluminate layer. The metal oxide layer is made of metal and oxygen. The metal silicate layer is made of metal, oxygen and silicon. The metal aluminate layer is made of aluminium-excluding metal, oxygen and aluminium. The second insulation layer is composed of an insulation layer is composed of an insulation layer including metal, oxygen, silicon and nitrogen or an insulation layer including aluminium-excluding metal, oxygen, aluminium and nitrogen.
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