METHOD FOR FORMING STORAGE NODE ELECTRODE OF CAPACITOR TO PREVENT CAPACITOR FROM COLLAPSING AND AVOID SHORT-CIRCUIT BETWEEN ADJACENT CAPACITORS

摘要

PURPOSE: A method for forming a storage node electrode of a capacitor is provided to prevent a capacitor from collapsing and avoid a short circuit between adjacent capacitors by forming a storage node electrode of a stable cone type. CONSTITUTION: A semiconductor substrate(100) including a conductive plug(104) is prepared. A cap oxide layer(106) to which dopants of higher density are injected as it goes to the lower part is formed on the front surface of the substrate. The cap oxide layer is selectively etched to form a storage node contact of a cone type exposing the conductive plug. A polycrystalline silicon layer and a photoresist layer are formed on the front surface of the storage node contact structure. A CMP(chemical mechanical polishing) process is performed on the photoresist layer and the polycrystalline silicon layer until the cap oxide layer is exposed. The remaining photoresist layer is eliminated.