METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE TO FORM THIN INTERCONNECTION AND PREVENT PATTERN COLLAPSE

摘要

PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to form a thin interconnection and prevent pattern collapse by reducing the size of a wordline through an etch condition in an etch process for defining the wordline. CONSTITUTION: A gate oxide layer, a polysilicon layer, a tungsten thin film, a hard mask layer and an arc thin film are sequentially formed on a semiconductor substrate(31). The arc thin film and the hard mask layer are sequentially patterned to form an arc thin film pattern and a hard mask layer pattern. The arc thin film pattern and the hard mask layer pattern are flowed and plasma-treated. The tungsten thin film, the polysilicon layer and the gate oxide layer are sequentially patterned to form a metal interconnection.