METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE TO PREVENT OR MINIMIZE SHORT-CIRCUIT PHENOMENON

摘要

PURPOSE: A method for forming a contact of a semiconductor device is provided to prevent or minimize a short-circuit phenomenon by preventing misalignment of contacts formed in a direction perpendicular to a bitline. CONSTITUTION: A line pattern which is composed of a conductive layer for a bitline and a capping layer and is surrounded by an insulation layer is formed in parallel in a semiconductor substrate. A contact is formed on the semiconductor substrate, passing through the line patterns. A masking layer in which a portion except a contact region among the upper part of the insulation layer and the line pattern is masked is formed on the insulation layer and the line pattern. The insulation layer is etched by using the masking layer as an etch mask to form a contact hole passing through the line patterns. After a spacer is formed on the sidewall of the contact hole, the inside of the contact hole is filled with a conductive material to form a contact.