| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce deviation in the characteristics among transistors even when the profile of a gate electrode is different. <P>SOLUTION: A gate electrode 3c is provided with a dummy gate contact region 8 arranged on an isolation region 4 between an n-channel transistor MN1 and a p-channel transistor MP1 such that it corresponds with the gate contact region 7a of a gate electrode 3b. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
